Plasma-Enhanced Atomic Layer Deposition of Two-Dimensional WS2 from WF6, H2 Plasma, and H2S

Introduction to (plasma-enhanced) atomic layer deposition

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

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Plasma-assisted atomic layer deposition of Ta2O5 from alkylamide precursor and remote O2 plasma

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Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition

Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, tr...